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NTMD2C02R2SG Texnik spetsifikatsiyalar

MOSFET COMP20V 2A .043R TR

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / MOSFET tranzistorlar massivlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~150°C TJ
Published 2006
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating 5.2A
Pin Count 8
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power Dissipation 2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.2A 3.4A
Rise Time 40ns
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 3.4A
Drain-source On Resistance-Max 0.043Ohm
Pulsed Drain Current-Max (IDM) 48A
FET Feature Logic Level Gate
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-G8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 43m Ω @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 35 ns
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
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