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NTMD2C02R2 Texnik spetsifikatsiyalar

MOSFET N/P-CH 20V 8SOIC

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / MOSFET tranzistorlar massivlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~150°C TJ
Published 2006
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Form GULL WING
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 43m Ω @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 35 ns
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status Non-RoHS Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 240
Current Rating 2A
Pin Count 8
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power Dissipation 2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.2A 3.4A
Rise Time 40ns
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 3.4A
Drain-source On Resistance-Max 0.043Ohm
Pulsed Drain Current-Max (IDM) 48A
FET Feature Logic Level Gate
Lead Free Contains Lead
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