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IPB067N08N3GATMA1 Texnik spetsifikatsiyalar

Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263 T/R

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 136W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 73μA
Current - Continuous Drain (Id) @ 25°C 80A Tc
Drain to Source Voltage (Vdss) 80V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.0067Ohm
DS Breakdown Voltage-Min 80V
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.7m Ω @ 73A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3840pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain Current-Max (Abs) (ID) 80A
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 150 mJ
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