IPB065N03LGATMA1 Texnik spetsifikatsiyalar

Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 52 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5m Ω @ 30A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 50A Tc
Rise Time 4.2ns
Vgs (Max) ±20V
Turn-Off Delay Time 21 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0095Ohm
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 56W Tc
Power Dissipation 56W
Turn On Delay Time 5.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 3.4 ns
Continuous Drain Current (ID) 50A
Max Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 60 mJ
Lead Free Contains Lead
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