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UMB10NTN Texnik spetsifikatsiyalar

TRANS PREBIAS DUAL PNP UMT6

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / BJT tranzistorlari massivlari
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 6
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
HTS Code 8541.21.00.75
Voltage - Rated DC -50V
Terminal Form GULL WING
Current Rating -100mA
Base Part Number MB10
Max Output Current 100mA
Number of Elements 2
Element Configuration Dual
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
hFE Min 80
Continuous Collector Current -100mA
VCEsat-Max 0.3 V
Length 2.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Packaging Tape & Reel (TR)
JESD-609 Code e2
Part Status Active
Number of Terminations 6
Terminal Finish Tin/Copper (Sn/Cu)
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 150mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 6
Operating Supply Voltage 50V
Polarity PNP
Power Dissipation 300mW
Transistor Type 2 PNP - Pre-Biased (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) -5V
Resistor - Base (R1) 2.2k Ω
Resistor - Emitter Base (R2) 47k Ω
Height 900μm
Width 1.35mm
REACH SVHC No SVHC
Lead Free Lead Free
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