SMMUN2111LT1G Texnik spetsifikatsiyalar

SMMUN2111LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at Bonchip

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Oldindan xolis BJT tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Terminal Position DUAL
Base Part Number MMUN21**L
Reference Standard AEC-Q101
Polarity PNP
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
hFE Min 35
Resistor - Emitter Base (R2) 10 k Ω
Length 3.04mm
Radiation Hardening No
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation 246mW
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Element Configuration Single
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Saturation Voltage 250mV
Collector Base Voltage (VCBO) 50V
Resistor - Base (R1) 10 k Ω
Height 1.01mm
Width 1.4mm
RoHS Status ROHS3 Compliant
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