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NTHD4502NT1G Texnik spetsifikatsiyalar

MOSFET 30V 3.9A Dual N-Channel

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / MOSFET tranzistorlar massivlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 30V
Terminal Form C BEND
Current Rating 2.9A
Base Part Number NTHD4502N
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7.8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.2A
Rise Time 5.4ns
Turn-Off Delay Time 14.9 ns
Gate to Source Voltage (Vgs) 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 1.1mm
Width 1.7mm
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 10 hours ago)
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 8
Resistance 80MOhm
Subcategory FET General Purpose Power
Max Power Dissipation 640mW
Peak Reflow Temperature (Cel) 260
[email protected]k Reflow Temperature-Max (s) 40
Pin Count 8
Element Configuration Dual
Power Dissipation 1.13W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 85m Ω @ 2.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Fall Time (Typ) 5.4 ns
Continuous Drain Current (ID) 3.9A
Drain to Source Breakdown Voltage -20V
FET Feature Logic Level Gate
Length 3.1mm
Radiation Hardening No
Lead Free Lead Free
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