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NTD6416ANL-1G Texnik spetsifikatsiyalar

MOSFET NFET DPAK 100V 15A 86MOHM

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSFM-T3
Power Dissipation-Max 71W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 74m Ω @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 40 ns
Continuous Drain Current (ID) 19A
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 50 mJ
Length 6.73mm
Radiation Hardening No
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 71W
Turn On Delay Time 7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 19A Tc
Rise Time 16ns
Vgs (Max) ±20V
Turn-Off Delay Time 35 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 70A
Height 7.62mm
Width 2.38mm
RoHS Status RoHS Compliant
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