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NTD4909N-1G Texnik spetsifikatsiyalar

MOSFET N-CH 30V 41A SGL IPAK

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSIP-T3
Power Dissipation-Max 1.37W Ta 29.4W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.8A Ta 41A Tc
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 41A
Drain Current-Max (Abs) (ID) 8.8A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 28 mJ
RoHS Status RoHS Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 2.6W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1314pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 10V
Vgs (Max) ±20V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.012Ohm
Pulsed Drain Current-Max (IDM) 167A
Radiation Hardening No
Lead Free Lead Free
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Quyidagi qismlar o'z ichiga oladi  'NTD49' 

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