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NTD25P03L1G Texnik spetsifikatsiyalar

MOSFET P-CH 30V 25A IPAK3

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Current Rating -25A
Pin Count 4
Qualification Status Not Qualified
Power Dissipation-Max 75W Tj
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 25A Ta
Rise Time 37ns
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 25A
Drain-source On Resistance-Max 0.08Ohm
Pulsed Drain Current-Max (IDM) 75A
RoHS Status RoHS Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -30V
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 75W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 80m Ω @ 25A, 5V
Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±15V
Turn-Off Delay Time 15 ns
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage -30V
Avalanche Energy Rating (Eas) 200 mJ
Lead Free Lead Free
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