NTD110N02R-001G Texnik spetsifikatsiyalar

MOSFET N-CH 24V 12.5A IPAK

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 110A
Pin Count 4
Qualification Status Not Qualified
Power Dissipation-Max 1.5W Ta 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 12.5A Ta 110A Tc
Rise Time 39ns
Vgs (Max) ±20V
Turn-Off Delay Time 27 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0062Ohm
Avalanche Energy Rating (Eas) 120 mJ
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 24V
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.88W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.6m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3440pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 110A
Drain Current-Max (Abs) (ID) 12.5A
Drain to Source Breakdown Voltage 24V
RoHS Status RoHS Compliant
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