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NTB6411ANG Texnik spetsifikatsiyalar

MOSFET NFET D2PAK 100V 72A 14MO

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Resistance 14MOhm
Subcategory FET General Purpose Powers
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 217W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 157 ns
Continuous Drain Current (ID) 72A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 470 mJ
Length 10.29mm
Radiation Hardening No
RoHS Status RoHS Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Weight 4.535924g
Operating Temperature -55°C~175°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 217W
Turn On Delay Time 16 ns
Rds On (Max) @ Id, Vgs 14m Ω @ 72A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 77A Tc
Rise Time 144ns
Vgs (Max) ±20V
Turn-Off Delay Time 107 ns
Threshold Voltage 4V
Drain Current-Max (Abs) (ID) 77A
Pulsed Drain Current-Max (IDM) 285A
Height 4.83mm
Width 9.65mm
REACH SVHC Unknown
Lead Free Lead Free
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