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NTB23N03RT4G Texnik spetsifikatsiyalar

MOSFET N-CH 25V 23A D2PAK

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 37.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 3.76nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 2 ns
Continuous Drain Current (ID) 23A
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 25V
RoHS Status RoHS Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
HTS Code 8541.29.00.95
Voltage - Rated DC 25V
Terminal Form GULL WING
Current Rating 23A
Pin Count 3
Qualification Status Not Qualified
Power Dissipation-Max 37.5W Tj
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 23A Ta
Rise Time 14.9ns
Vgs (Max) ±20V
Turn-Off Delay Time 9.9 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.06Ohm
Pulsed Drain Current-Max (IDM) 60A
Lead Free Lead Free
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NTB23N03RT4G MOS AMI Semiconductor / ON Semiconductor Ixtisoslashtirilgan Hot IClar 1125

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