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NSVBC848CDW1T1G Texnik spetsifikatsiyalar

Trans GP BJT NPN 30V 0.1A 6-Pin SOT-363 T/R

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / BJT tranzistorlari massivlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 380mW
Pin Count 6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS
Transistor Application AMPLIFIER
Collector Emitter Voltage (VCEO) 600mV
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 100MHz
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Form GULL WING
Reference Standard AEC-Q101
Polarity NPN
Power - Max 380mW
Transistor Type 2 NPN (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 15nA ICBO
Collector Emitter Breakdown Voltage 30V
Frequency - Transition 100MHz
Lead Free Lead Free
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