NGTB30N120FL2WG Texnik spetsifikatsiyalar

IGBT Transistors 1200V/30A FAST IGBT FSII

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona IGBTlar
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 11 Weeks
Mount Through Hole
Package / Case TO-247-3
Weight 6.500007g
Packaging Tube
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Max Power Dissipation 452W
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Power - Max 452W
Max Collector Current 60A
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
Gate Charge 220nC
Td (on/off) @ 25°C 98ns/210ns
Height 21.4mm
Width 5.3mm
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Input Type Standard
Collector Emitter Voltage (VCEO) 1.2kV
Reverse Recovery Time 240 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 30A, 10 Ω, 15V
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 120A
Switching Energy 2.6mJ (on), 700μJ (off)
Length 16.25mm
REACH SVHC No SVHC
Lead Free Lead Free
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