MMBT6427LT1G Texnik spetsifikatsiyalar

MMBT6427LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Bitta BJT tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 40V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Polarity NPN
Power Dissipation 225mW
Transistor Type NPN - Darlington
Max Collector Current 500mA
Current - Collector Cutoff (Max) 1μA
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 1.2V
Collector Base Voltage (VCBO) 40V
hFE Min 10000
Height 1.01mm
Width 1.4mm
REACH SVHC No SVHC
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Surface Mount YES
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Subcategory Other Transistors
Max Power Dissipation 225mW
Terminal Form GULL WING
Current Rating 600mA
Base Part Number MMBT6427
Number of Elements 1
Element Configuration Single
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500μA, 500mA
Transition Frequency 130MHz
Max Breakdown Voltage 40V
Emitter Base Voltage (VEBO) 12V
Continuous Collector Current 500mA
Length 3.04mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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