MJW21195G Texnik spetsifikatsiyalar

MJW21195G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Bitta BJT tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -65°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 200W
Current Rating -16A
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 4MHz
Collector Emitter Voltage (VCEO) 250V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8A 5V
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 250V
Collector Emitter Saturation Voltage 1V
Emitter Base Voltage (VEBO) 5V
Height 21.08mm
Width 5.3mm
REACH SVHC No SVHC
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC -250V
Peak Reflow Temperature (Cel) 260
Frequency 4MHz
Pin Count 3
Polarity PNP, NPN
Power Dissipation 200W
Transistor Application AMPLIFIER
Transistor Type PNP
Max Collector Current 16A
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 3V @ 3.2A, 16A
Transition Frequency 4MHz
Collector Base Voltage (VCBO) 400V
hFE Min 20
Length 16.26mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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