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MJ802G Texnik spetsifikatsiyalar

MJ802G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Bitta BJT tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -65°C~200°C TJ
Published 2000
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 200W
Terminal Form PIN/PEG
Current Rating 30A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 2
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 2MHz
Transistor Type NPN
Max Collector Current 30A
Current - Collector Cutoff (Max) 1mA ICBO
Collector Emitter Breakdown Voltage 90V
Collector Emitter Saturation Voltage 800mV
Emitter Base Voltage (VEBO) 4V
Height 8.51mm
Width 26.67mm
REACH SVHC No SVHC
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-204AA, TO-3
Number of Pins 2
Transistor Element Material SILICON
Packaging Tray
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Voltage - Rated DC 90V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Frequency 2MHz
Base Part Number MJ802
Number of Elements 1
Power Dissipation 200W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 90V
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 7.5A 2V
Vce Saturation (Max) @ Ib, Ic 800mV @ 750mA, 7.5A
Transition Frequency 2MHz
Collector Base Voltage (VCBO) 100V
hFE Min 25
Length 39.37mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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