HGTG27N120BN Texnik spetsifikatsiyalar

HGTG27N120BN datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona IGBTlar
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 44 Weeks
Mount Through Hole
Package / Case TO-247-3
Weight 6.39g
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 500W
Number of Elements 1
Power Dissipation 500W
Input Type Standard
Transistor Application POWER CONTROL
Turn-Off Delay Time 240 ns
Max Collector Current 72A
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 42 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 27A
Turn Off Time-Nom (toff) 360 ns
Gate Charge 270nC
Td (on/off) @ 25°C 24ns/195ns
Height 20.82mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, AVALANCHE RATED
Voltage - Rated DC 1.2kV
Current Rating 72A
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 24 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.45V
Test Condition 960V, 27A, 3 Ω, 15V
Continuous Collector Current 72A
IGBT Type NPT
Current - Collector Pulsed (Icm) 216A
Switching Energy 2.2mJ (on), 2.3mJ (off)
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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