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FQPF10N50CF Texnik spetsifikatsiyalar

MOSFET N-CH 500V 10A TO-220F

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 610mOhm
Additional Feature FAST SWITCHING
Voltage - Rated DC 500V
Current Rating 10A
Power Dissipation-Max 48W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 29 ns
Rds On (Max) @ Id, Vgs 610m Ω @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2096pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 80 ns
Continuous Drain Current (ID) 10A
Drain to Source Breakdown Voltage 500V
Radiation Hardening No
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series FRFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 48W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 10A Tc
Rise Time 80ns
Vgs (Max) ±30V
Turn-Off Delay Time 141 ns
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 40A
RoHS Status ROHS3 Compliant
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FQPF10N50CF Hujjatlar

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Boshqalar o'z ichiga oladi   "FQPF1"   qismlar

Quyidagi qismlar o'z ichiga oladi  'FQPF1' 

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