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FQD9N25TM Texnik spetsifikatsiyalar

MOSFET 250V N-Channel QFET

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 7.4A
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7.4A Tc
Rise Time 105ns
Vgs (Max) ±30V
Turn-Off Delay Time 25 ns
Threshold Voltage 5V
Drain-source On Resistance-Max 0.42Ohm
Pulsed Drain Current-Max (IDM) 29.6A
REACH SVHC No SVHC
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Voltage - Rated DC 250V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 2.5W Ta 55W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 420m Ω @ 3.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 45 ns
Continuous Drain Current (ID) 7.4A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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