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FQB33N10LTM Texnik spetsifikatsiyalar

Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK T/R

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -55°C~175°C TJ
Published 2000
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 52MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 33A
Number of Elements 1
Element Configuration Single
Power Dissipation 3.75W
Turn On Delay Time 17 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 33A Tc
Rise Time 470ns
Vgs (Max) ±20V
Turn-Off Delay Time 70 ns
Threshold Voltage 2V
Drain to Source Breakdown Voltage 100V
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 19 hours ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 100V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.75W Ta 127W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 52m Ω @ 16.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 120 ns
Continuous Drain Current (ID) 33A
Gate to Source Voltage (Vgs) 20V
Height 4.83mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
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