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FQB11P06TM Texnik spetsifikatsiyalar

MOSFET 60V P-Channel QFET

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -55°C~175°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Voltage - Rated DC -60V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.13W Ta 53W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 175m Ω @ 5.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±25V
Turn-Off Delay Time 15 ns
Gate to Source Voltage (Vgs) 25V
Pulsed Drain Current-Max (IDM) 45.6A
Length 10.67mm
Radiation Hardening No
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Current Rating -11.4A
Number of Elements 1
Element Configuration Single
Power Dissipation 3.13W
Turn On Delay Time 6.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 11.4A Tc
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 45 ns
Continuous Drain Current (ID) 11.4A
Drain to Source Breakdown Voltage -60V
Height 4.83mm
Width 9.65mm
RoHS Status ROHS3 Compliant
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