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FDWS86369-F085 Texnik spetsifikatsiyalar

MOSFET NCH 80V 65A POWER56

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 44 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Weight 172.8mg
Operating Temperature -55°C~175°C TJ
Series Automotive, AEC-Q101, PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 65A Tc
Drain to Source Voltage (Vdss) 80V
Vgs (Max) ±20V
JEDEC-95 Code MO-240AA
Avalanche Energy Rating (Eas) 27 mJ
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F5
Power Dissipation-Max 107W Tj
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.5m Ω @ 65A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2470pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 65A
Drain-source On Resistance-Max 0.0075Ohm
Turn On Time-Max (ton) 39ns
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