FDS89161 Texnik spetsifikatsiyalar

FDS89161 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / MOSFET tranzistorlar massivlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 11 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Weight 187mg
Operating Temperature -55°C~150°C TJ
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
Element Configuration Dual
Power Dissipation 3.1W
Power - Max 1.6W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 10V
Drain to Source Voltage (Vdss) 100V
Turn-Off Delay Time 7.3 ns
Threshold Voltage 3V
Drain-source On Resistance-Max 0.105Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
Length 4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 8
Terminal Finish Tin (Sn)
Max Power Dissipation 31W
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 4.2 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 105m Ω @ 2.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 50V
Rise Time 1.3ns
Fall Time (Typ) 1.9 ns
Continuous Drain Current (ID) 2.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
FET Feature Standard
Height 1.5mm
Width 5mm
REACH SVHC No SVHC
Lead Free Lead Free
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