FDP053N08B-F102 Texnik spetsifikatsiyalar

MOSFET N-CH 80V 75A TO-220

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Power Dissipation-Max 146W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.3m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5960pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 365 mJ
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Weight 1.8g
Operating Temperature -55°C~175°C TJ
Series PowerTrench®
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 146W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 75A Tc
Drain to Source Voltage (Vdss) 80V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.0053Ohm
DS Breakdown Voltage-Min 80V
RoHS Status ROHS3 Compliant
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FDP053N08B-F102 Hujjatlar

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Boshqalar o'z ichiga oladi   "FDP05"   qismlar

Quyidagi qismlar o'z ichiga oladi  'FDP05' 

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FDP053N08B-F102 AMI Semiconductor / ON Semiconductor Tranzistorlar - FETlar, MOSFETlar - yagona 2706
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