FDMS8558S Texnik spetsifikatsiyalar

FDMS8558S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LIFETIME (Last Updated: 1 week ago)
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®, SyncFET™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 1mA
Current - Continuous Drain (Id) @ 25°C 33A Ta 90A Tc
Rise Time 8ns
Vgs (Max) ±12V
Turn-Off Delay Time 51 ns
JEDEC-95 Code MO-240AA
Drain Current-Max (Abs) (ID) 90A
Height 1.05mm
Width 5.85mm
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerTDFN
Weight 90mg
Operating Temperature -55°C~150°C TJ
Published 2006
JESD-609 Code e3
Part Status Last Time Buy
Number of Terminations 5
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Terminal Position DUAL
JESD-30 Code R-PDSO-F5
Power Dissipation-Max 2.5W Ta 78W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5m Ω @ 33A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5118pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 38A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 25V
Length 5.1mm
Radiation Hardening No
Lead Free Lead Free
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# qism Ishlab chiqaruvchi Turkum Mavjudligi
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