FDMS7620S-F106 Texnik spetsifikatsiyalar

MOSFET 2N-CH 30V POWER56

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / MOSFET tranzistorlar massivlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mount Surface Mount
Package / Case 8-PowerWDFN
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Max Power Dissipation 2.5W
JESD-30 Code R-PDSO-N6
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.6 ns
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 20m Ω @ 10.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 608pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 17.4 ns
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 30V
FET Feature Standard
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Sub-Base Mount
Number of Pins 8
Series PowerTrench®
Part Status Active
Number of Terminations 6
Min Operating Temperature -55°C
Terminal Form NO LEAD
Number of Elements 2
Element Configuration Dual
Case Connection DRAIN SOURCE
Power - Max 1W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 10.1A 12.4A
Rise Time 1.8ns
Fall Time (Typ) 1.5 ns
Continuous Drain Current (ID) 12.4A
Drain Current-Max (Abs) (ID) 10.1A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 31 pF
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