FDFME3N311ZT Texnik spetsifikatsiyalar

MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Number of Pins 6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Power Dissipation-Max 1.4W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 299m Ω @ 1.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Fall Time (Typ) 2.8 ns
Continuous Drain Current (ID) 1.6A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1 V
Length 1.6mm
Radiation Hardening No
RoHS Status RoHS Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 6-UFDFN Exposed Pad
Weight 25.2mg
Operating Temperature -55°C~150°C TJ
Published 2009
JESD-609 Code e4
Part Status Obsolete
Number of Terminations 6
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 1.1W
Turn On Delay Time 6 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.8A Ta
Rise Time 16ns
Vgs (Max) ±12V
Turn-Off Delay Time 22 ns
Threshold Voltage 1V
Drain-source On Resistance-Max 0.299Ohm
FET Feature Schottky Diode (Isolated)
Height 550μm
Width 1.6mm
REACH SVHC No SVHC
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