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FDD3682-F085 Texnik spetsifikatsiyalar

MOSFET N-CH 100V 32A DPAK

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~175°C TJ
Published 2017
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory FET General Purpose Power
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 95W
Turn On Delay Time 9 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.5A Ta 32A Tc
Rise Time 46ns
Vgs (Max) ±20V
Turn-Off Delay Time 24 ns
JEDEC-95 Code TO-252AA
Drain to Source Breakdown Voltage 100V
Radiation Hardening No
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 95W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 36m Ω @ 32A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 26 ns
Continuous Drain Current (ID) 5.5A
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 55 mJ
RoHS Status ROHS3 Compliant
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