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FDD050N03B Texnik spetsifikatsiyalar

MOSFET 30V N-Channel PowerTrench

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~175°C TJ
Published 2004
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 65W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5m Ω @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2875pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 4.5 ns
Continuous Drain Current (ID) 90A
Drain Current-Max (Abs) (ID) 50A
Drain to Source Breakdown Voltage 30V
Height 2.39mm
Width 6.22mm
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Part Status Active
Number of Terminations 2
Subcategory FET General Purpose Power
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 65W
Turn On Delay Time 14.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 50A Tc
Rise Time 4.5ns
Vgs (Max) ±16V
Turn-Off Delay Time 30 ns
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.005Ohm
Avalanche Energy Rating (Eas) 72 mJ
Length 6.73mm
Radiation Hardening No
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