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SPP08N80C3XKSA1 Texnik spetsifikatsiyalar

MOSFET N-CH 800V 8A TO-220AB

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs 650m Ω @ 5.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.65Ohm
DS Breakdown Voltage-Min 800V
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 104W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 3.9V @ 470μA
Current - Continuous Drain (Id) @ 25°C 8A Tc
Drain to Source Voltage (Vdss) 800V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 8A
Pulsed Drain Current-Max (IDM) 24A
Avalanche Energy Rating (Eas) 340 mJ
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