IRGR4045DPBF Texnik spetsifikatsiyalar

IGBT 600V 12A 77W DPAK

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona IGBTlar
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tube
Part Status Obsolete
Number of Terminations 2
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Rise Time-Max 15ns
Power Dissipation 39W
Input Type Standard
Power - Max 77W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Reverse Recovery Time 74 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 38 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
IGBT Type Trench
Current - Collector Pulsed (Icm) 18A
Switching Energy 56μJ (on), 122μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Height 6.22mm
Width 2.39mm
RoHS Status RoHS Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2012
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 77W
Base Part Number IRGR4045
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 27 ns
Transistor Application POWER CONTROL
Turn-Off Delay Time 17 ns
Max Collector Current 12A
JEDEC-95 Code TO-252AA
Collector Emitter Saturation Voltage 2V
Test Condition 400V, 6A, 47 Ω, 15V
Turn Off Time-Nom (toff) 127 ns
Gate Charge 19.5nC
Td (on/off) @ 25°C 27ns/75ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 22ns
Length 6.73mm
Radiation Hardening No
Lead Free Lead Free
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