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IRFSL7434PBF Texnik spetsifikatsiyalar

MOSFET N-CH 40V 195A TO262

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®, StrongIRFET™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.6m Ω @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds 10820pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 324nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 68 ns
Continuous Drain Current (ID) 195A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 780A
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Weight 2.084002g
Operating Temperature -55°C~175°C TJ
Published 2004
Part Status Active
Number of Terminations 3
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 294W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 24 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.9V @ 250μA
Current - Continuous Drain (Id) @ 25°C 195A Tc
Rise Time 68ns
Vgs (Max) ±20V
Turn-Off Delay Time 115 ns
Threshold Voltage 3V
Drain to Source Breakdown Voltage 40V
REACH SVHC No SVHC
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