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IRFSL5615PBF Texnik spetsifikatsiyalar

MOSFET N-CH 150V 33A TO-262

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
Part Status Active
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) 40
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 42m Ω @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 13.1 ns
Continuous Drain Current (ID) 33A
Drain-source On Resistance-Max 0.042Ohm
Pulsed Drain Current-Max (IDM) 140A
Height 9.652mm
Width 4.826mm
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Power Dissipation-Max 144W Tc
Power Dissipation 144W
Turn On Delay Time 8.9 ns
Transistor Application AMPLIFIER
Vgs(th) (Max) @ Id 5V @ 100μA
Current - Continuous Drain (Id) @ 25°C 33A Tc
Rise Time 23.1ns
Vgs (Max) ±20V
Turn-Off Delay Time 17.2 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Avalanche Energy Rating (Eas) 109 mJ
Length 10.668mm
Radiation Hardening No
Lead Free Lead Free
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