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IRFP9140NPBF Texnik spetsifikatsiyalar

MOSFET P-CH 100V 23A TO-247AC

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 1998
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 117mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC -100V
Peak Reflow Temperature (Cel) 250
[email protected] Reflow Temperature-Max (s) 30
Power Dissipation-Max 140W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 117m Ω @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 97nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Continuous Drain Current (ID) -23A
JEDEC-95 Code TO-247AC
Drain to Source Breakdown Voltage -100V
Dual Supply Voltage -100V
Nominal Vgs -4 V
Length 15.875mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Bulk
Series HEXFET®
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Current Rating -23A
Number of Elements 1
Element Configuration Single
Power Dissipation 120W
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 23A Tc
Rise Time 67ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 51 ns
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 76A
Recovery Time 220 ns
Height 20.3mm
Width 5.3mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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