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IRF7606TRPBF Texnik spetsifikatsiyalar

MOSFET P-CH 30V 3.6A MICRO8

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 2 (1 Year)
Resistance 90MOhm
Voltage - Rated DC -30V
Terminal Position DUAL
Current Rating -3.6A
Power Dissipation-Max 1.8W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 39 ns
Continuous Drain Current (ID) -3.6A
Drain to Source Breakdown Voltage -30V
Height 860μm
Width 3mm
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2002
Part Status Active
Number of Terminations 8
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 1.8W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 90m Ω @ 2.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Turn-Off Delay Time 43 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 29A
Length 3mm
Radiation Hardening No
Lead Free Lead Free
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