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IRF7104TRPBF Texnik spetsifikatsiyalar

MOSFET 2P-CH 20V 2.3A 8-SOIC

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / MOSFET tranzistorlar massivlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 1997
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 250mOhm
Additional Feature ULTRA LOW RESISTANCE
Max Power Dissipation 2W
Current Rating -2.3A
Number of Elements 2
Element Configuration Dual
Power Dissipation 2W
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 250m Ω @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 20V
Turn-Off Delay Time 42 ns
Threshold Voltage -3V
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
Recovery Time 100 ns
Nominal Vgs -3 V
Length 4.9784mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -20V
Terminal Form GULL WING
Base Part Number IRF7104PBF
Row Spacing 6.3 mm
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.3A
Rise Time 16ns
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) -2.3A
Gate to Source Voltage (Vgs) 12V
Pulsed Drain Current-Max (IDM) 10A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.4986mm
Width 3.9878mm
REACH SVHC No SVHC
Lead Free Lead Free
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