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IRF3710ZLPBF Texnik spetsifikatsiyalar

MOSFET N-CH 100V 59A TO-262

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 15 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2003
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 100V
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Power Dissipation-Max 160W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 18m Ω @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 56 ns
Continuous Drain Current (ID) 59A
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 200 mJ
Height 9.65mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 59A
Number of Elements 1
Element Configuration Single
Power Dissipation 160W
Turn On Delay Time 17 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 59A Tc
Rise Time 77ns
Vgs (Max) ±20V
Turn-Off Delay Time 41 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 240A
Nominal Vgs 4 V
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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