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IRF2804LPBF Texnik spetsifikatsiyalar

MOSFET N-CH 40V 75A TO-220-3

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2003
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Voltage - Rated DC 40V
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.3m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Fall Time (Typ) 130 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 540 mJ
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Active
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 75A
Number of Elements 1
Element Configuration Single
Power Dissipation 330W
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 75A Tc
Rise Time 120ns
Turn-Off Delay Time 130 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage 40V
Height 9.652mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
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