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IPP60R380P6XKSA1 Texnik spetsifikatsiyalar

MOSFET N-CH 600V TO220-3

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
Part Status Obsolete
Max Operating Temperature 150°C
Technology MOSFET (Metal Oxide)
Turn On Delay Time 12 ns
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 10.6A Tc
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 10.6A
Max Dual Supply Voltage 600V
Drain to Source Resistance 342mOhm
RoHS Status RoHS Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3
Packaging Tube
Series CoolMOS™ P6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Power Dissipation-Max 83W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 4.5V @ 320μA
Input Capacitance (Ciss) (Max) @ Vds 877pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Turn-Off Delay Time 33 ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 877pF
Rds On Max 380 mΩ
Lead Free Lead Free
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