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IPP50R520CPXKSA1 Texnik spetsifikatsiyalar

MOSFET N-CH 500V 7.1A TO-220

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Last Time Buy
Number of Terminations 3
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 66W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 520m Ω @ 3.8A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 7.1A Tc
Rise Time 14ns
Vgs (Max) ±20V
Turn-Off Delay Time 80 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 500V
Drain to Source Breakdown Voltage 550V
Avalanche Energy Rating (Eas) 166 mJ
Lead Free Lead Free
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 66W
Turn On Delay Time 35 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 7.1A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.52Ohm
Pulsed Drain Current-Max (IDM) 15A
RoHS Status ROHS3 Compliant
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