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IPP45N06S4L08AKSA2 Texnik spetsifikatsiyalar

MOSFET N-CH 60V 45A PG-TO220-3

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2009
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Number of Elements 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 2.2V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds 4780pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 45A
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.0079Ohm
Avalanche Energy Rating (Eas) 97 mJ
Length 10mm
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series Automotive, AEC-Q101, OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 71W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 9 ns
Rds On (Max) @ Id, Vgs 8.2m Ω @ 45A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 45A Tc
Rise Time 2ns
Vgs (Max) ±16V
Turn-Off Delay Time 45 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 60V
Pulsed Drain Current-Max (IDM) 180A
Height 15.65mm
Width 4.4mm
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