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IPP220N25NFDAKSA1 Texnik spetsifikatsiyalar

MOSFET N-CH 250V 61A TO220

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 7076pF @ 125V
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 61A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.022Ohm
RoHS Status ROHS3 Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Weight 6.000006g
Operating Temperature -55°C~175°C TJ
Published 2012
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Number of Elements 1
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 14 ns
Rds On (Max) @ Id, Vgs 22m Ω @ 61A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 61A Tc
Rise Time 10ns
Vgs (Max) ±20V
Turn-Off Delay Time 26 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 250V
Pulsed Drain Current-Max (IDM) 244A
Lead Free Contains Lead
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