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IPI120N04S401AKSA1 Texnik spetsifikatsiyalar

Trans MOSFET N-CH 40V 120A 3-Pin(3+Tab) TO-262

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2010
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 188W Tc
Turn On Delay Time 34 ns
Rds On (Max) @ Id, Vgs 1.9m Ω @ 100A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 120A Tc
Rise Time 16ns
Vgs (Max) ±20V
Turn-Off Delay Time 41 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0019Ohm
Avalanche Energy Rating (Eas) 750 mJ
Lead Free Contains Lead
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 140μA
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 176nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 36 ns
Continuous Drain Current (ID) 120A
Max Dual Supply Voltage 40V
Pulsed Drain Current-Max (IDM) 480A
RoHS Status ROHS3 Compliant
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