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IPD80N04S306ATMA1 Texnik spetsifikatsiyalar

MOSFET N-CH 40V 90A TO252-3

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 3.949996g
Operating Temperature -55°C~175°C TJ
Published 2007
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 100W Tc
Case Connection DRAIN
Rds On (Max) @ Id, Vgs 5.2m Ω @ 80A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 90A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 90A
Drain-source On Resistance-Max 0.0052Ohm
Lead Free Contains Lead
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Not For New Designs
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 52μA
Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Vgs (Max) ±20V
Max Dual Supply Voltage 40V
RoHS Status ROHS3 Compliant
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