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IPD65R225C7ATMA1 Texnik spetsifikatsiyalar

Trans MOSFET N-CH 700V 11A 3-Pin(2+Tab) TO-252 T/R

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 63W Tc
Power Dissipation 63W
Turn On Delay Time 9 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 240μA
Input Capacitance (Ciss) (Max) @ Vds 996pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 11A
Max Dual Supply Voltage 650V
Avalanche Energy Rating (Eas) 48 mJ
Lead Free Contains Lead
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series CoolMOS™ C7
Part Status Active
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 225m Ω @ 4.8A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 11A Tc
Rise Time 6ns
Vgs (Max) ±20V
Turn-Off Delay Time 48 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.225Ohm
RoHS Status ROHS3 Compliant
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