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IPD60R650CEATMA1 Texnik spetsifikatsiyalar

MOSFET N-Ch 600V 7A DPAK-2

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™ CE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 63W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 200μA
Current - Continuous Drain (Id) @ 25°C 7A Tc
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 7A
Drain-source On Resistance-Max 0.65Ohm
RoHS Status RoHS Compliant
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Weight 3.949996g
Operating Temperature -40°C~150°C TJ
Published 2014
Part Status Obsolete
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Channels 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 650m Ω @ 2.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Turn-Off Delay Time 58 ns
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 600V
Lead Free Lead Free
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