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MOSFET N-CH 500V 1.7A PG-TO-252

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™ CE
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
HTS Code 8541.29.00.95
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 26W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3 Ω @ 400mA, 13V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Drive Voltage (Max Rds On,Min Rds On) 13V
Continuous Drain Current (ID) 1.7A
Drain-source On Resistance-Max 3Ohm
Avalanche Energy Rating (Eas) 18 mJ
Lead Free Contains Lead
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 30μA
Input Capacitance (Ciss) (Max) @ Vds 84pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 10V
Vgs (Max) ±20V
Max Dual Supply Voltage 500V
Pulsed Drain Current-Max (IDM) 4.1A
RoHS Status ROHS3 Compliant
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