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IPC90N04S53R6ATMA1 Texnik spetsifikatsiyalar

MOSFET N-CH 40V 90A 8TDSON-34

Mahsulot atributi Atribut qiymati
Category Diskret yarim o'tkazgichlar / Yagona MOSFET tranzistorlari
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 63W Tc
Case Connection DRAIN
Rds On (Max) @ Id, Vgs 3.6m Ω @ 45A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 32.6nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 7V 10V
Drain Current-Max (Abs) (ID) 90A
Pulsed Drain Current-Max (IDM) 360A
Avalanche Energy Rating (Eas) 40 mJ
Mahsulot atributi Atribut qiymati
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2016
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 3.4V @ 23μA
Current - Continuous Drain (Id) @ 25°C 90A Tc
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.0044Ohm
DS Breakdown Voltage-Min 40V
RoHS Status ROHS3 Compliant
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